Development Path for Z-Pinch IFE*
C. L. Olson, G. E. Rochau, C. Morrow**
Sandia National Laboratories
P.O. Box 5800, Albuquerque, NM 87185-1188 USA
Z-pinch IFE exploits the advantages of using high-yield targets
(~
few GJ) at low rep-rate (~
0.1 Hz),
with a Recyclable Transmission Line (RTL) to provide the necessary standoff between the
fusion target and the power plant chamber. Z-pinch IFE development areas include (1)
pulsed power drivers, (2) z-pinch physics, (3) z-pinch targets, and (4) z-pinch power
plants. The status of each of these areas, and recent experimental results on RTL
development, are briefly summarized. Development plans for z-pinch IFE are discussed.
Demonstration of ignition and high yield target development will be based on single-shot
results from NIF and Z, ZR, and beyond. Development of rep-rated z-pinch IFE should be
at the Proof-of-Principle level, and include several physics/engineering development areas
[e.g., shock mitigation for the first wall, rep-rated pulsed power for 0.1 Hz, RTL power
flow, RTL interface connections, insulator stack shielding, cartridge (RTL + target)
optimization, RTL demonstration on Z/ZR, scaled RTL cycle demonstration at 0.1 Hz, power
plant optimization,…]. Development of z-pinch IFE targets includes research on
several target options [e.g., z-pinch driven hohlraum, dynamic hohlraum, fast ignitor,
…]. Development of z-pinch IFE technology includes development of several areas
[e.g., IFE materials, chamber coolant dynamics, target fabrication, …], but note that
the RTL approach has eliminated the problems of target injection, final optics, and pointing
and tracking. Milestones and decision points for proceeding to a z-pinch Integrated
Research Experiment (IRE), an Engineering Test Facility (ETF), and an IFE Demonstration
Plant are discussed.
* Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin
Company, for the United States Department of Energy Under Contract DE-AC04-94-AL8500.
** In collaboration with S. A. Slutz, P. S. Pickard, R. E. Olson, T. A. Mehlhorn, R. A.
Vessey, K. W. Struve, A. R. Parker, G. Benevides, T. J. Renk, T. J. Tanaka, G. A. Rochau,
M. A. Ulrickson, D. H. McDaniel, M. K. Matzen, J. P. Quintenz, Sandia National
Laboratories, Albuquerque, NM; P. F. Peterson, University of California, Berkeley,
Berkeley, CA; J. S. De Groot, University of California, Davis, Davis, CA;
R. R. Peterson, I. Golovkin, G. L. Kulcinski, University of Wisconsin, Madison, WI;
C. Gibson,
General Atomics, San Diego, CA;
H. Tran,
University of New Mexico, Albuquerque, NM;
M. S. Tillack, A. R. Raffray,
University of California, San Diego, San Diego, CA;
T. R. Knowles,
Energy Sciences Laboratories, Inc., San Diego, CA.
clolson
sandia.gov
